HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

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HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

Name: HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : HJ44H11

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector- Emitter Voltage : 80 V

Emitter-Base Voltage : 5 V

Collector Current : 8 A

Base Current : 5 A

Junction Temperature : +150 ℃

Storage Temperature : -55~+150 ℃

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HJ44H11 NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION

The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others.

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETER		SYMBOL	RATINGS	UNIT
Collector- Emitter Voltage		V_CEO	80	V
Collector-Emitter Voltage		V_CES	80	V
Emitter-Base Voltage		V_EBO	5	V
Collector Current		I_C	8	A
Base Current		I_B	5	A
Power Dissipation (TC=25℃)	SOT-223	P_D	5	W
	TO-220		65	W
	TO-252		20	W
Junction Temperature		T_J	+150	℃
Storage Temperature		T_STG	-55~+150	℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

TYPICAL CHARACTERISTICS

HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

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Part NO.

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MFG

D/C

Package

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Product Tags:

power mosfet ic

multi emitter transistor

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